• Si-PCX
  • I-PCX-Lens-Si-1
  • Si-plano-convex

Isilicon (Si)
IiLensi zePlano-Convex

Iilensi zePlano-convex (PCX) zinobude bojoliso obulungileyo kwaye zingasetyenziselwa ukujolisa umqadi odityanisiweyo ukuya kwindawo ekugxilwe kuyo ngasemva, ukudibanisa ukukhanya ukusuka kwindawo yomthombo, okanye ukunciphisa i-engile ephambukayo yomthombo ophambukayo.Ukunciphisa ukuqaliswa kwe-spherical aberration, umthombo wokukhanya odibeneyo kufuneka ube sesiganeko kwindawo egobileyo ye-lens xa usebenzisa i-PCX ukugxila kumthombo wokukhanya odibeneyo;Ngokufanayo, imitha yokukhanya ephambukayo kufuneka ibe sehlo kumphezulu ocwangcisiweyo welensi yePCX xa kungqubana indawo yomthombo wokukhanya.Ezi lens zisetyenziswa kwi-conjugate applications engenasiphelo kunye nesiphelo.

Xa uthatha isigqibo phakathi kwelensi yeplano-convex kunye ne-bi-convex lens, zombini ezibangela ukuba ukukhanya kwesiganeko esidityanisiweyo kuhlangane, kudla ngokufaneleka ngakumbi ukukhetha iplano-convex lens ukuba ulwandiso olufunekayo lungaphantsi kwe-0.2 okanye lukhulu kuno 5. Phakathi kwala maxabiso mabini, iilensi ze-bi-convex zikhethwa ngokubanzi.

I-silicon inikezela nge-conductivity ephezulu ye-thermal kunye noxinzelelo oluphantsi.Nangona kunjalo inebhendi eyomeleleyo yokufunxa kwi-9 microns, ayifanelekanga ukusetyenziswa kunye ne-CO2 ye-laser transmission applications.IParalight Optics ibonelela ngeeLensi zeSilicon (Si) zePlano-Convex ziyafumaneka nge-broadband AR yokugquma elungiselelwe i-3 µm ukuya kwi-5 μm uluhlu lokubonwayo olufakwe kuyo yomibini imiphezulu.Olu gquba lunciphisa kakhulu ukubonakaliswa komphezulu we-substrate, inika ukuhanjiswa okuphezulu kunye nokufunxa okuncinci kulo lonke uluhlu lokugquma kwe-AR.Jonga iiGrafu kwiireferensi zakho.

icon-radiyo

Iimbonakalo:

Izinto:

Isilicon (Si)

Inkqutyana:

Uxinano oluphantsi kunye ne-High Thermal Conductivity

Iinketho zokugquma:

Ingagqunywanga okanye ngeAntireflection & DLC Coatings for the 3 - 5 μm Range

Ubude bokuJonga:

Ifumaneka ukusuka kwi-15 ukuya kwi-1000 mm

uphawu-uphawu

Iingcaciso eziqhelekileyo:

pro-enxulumene-ico

Umzobo weReferensi ye

I-Plano-convex (PCX) iLens

Idaya: Ububanzi
f: Ubude bokuJonga
ff: Ubude bokuJonga ngaphambili
fb: Ubude bokujongwa ngasemva
R: Irediyasi
tc: Ukutyeba embindini
te: Ukutyeba komda
H”: Inqwelo-moya eyiNqununu yoBuyela

Qaphela: Ubude obugxininise bumiselwa ukusuka kwinqwelo-moya eyintloko yangasemva, engahambelaniyo nobukhulu bomphetho.

Iiparamitha

Uluhlu kunye noNyamezelo

  • I-Substrate Material

    Isilicon (Si)

  • Uhlobo

    I-Plano-Concex (PCX) iLens

  • Isalathiso seRefraction

    3.422 @ 4.58 μm

  • Inombolo ka-Abbe (Vd)

    Ayichazwanga

  • I-Thermal Expansion Coefficient (CTE)

    2.6 x 10-6/ nge 20℃

  • Ukunyamezela kwe-Diameter

    Precison: +0.00/-0.10mm |Ukuchaneka okuphezulu: + 0.00 / -0.02mm

  • Ukutyeba Ukunyamezela

    Precison: +/-0.10 mm |Ukuchaneka okuphezulu: -0.02 mm

  • Unyamezelo loBude obuJolisekileyo

    +/- 1%

  • Umgangatho womphezulu (Scratch-Dig)

    Precison: 60-40 |Ukuchaneka okuphezulu: 40-20

  • Umphezulu oMcaba (icala lePlano)

    λ/4

  • Amandla oMphezulu oSpherical (icala leConvex)

    3 λ/4

  • i-Surface irregularity (iNcopho ukuya kwiNtlambo)

    λ/4

  • Iziko

    Umzobo:<3 arcmin |Ukuchaneka okuphezulu: <30 arcsec

  • Umngxuma ocacileyo

    90% yoMdayamitha

  • Uluhlu lwe-AR Coating

    3 - 5 μm

  • Ugqithiso phezu koLunge loKutyabeka (@ 0° AOI)

    Tavg > 98%

  • IReflectance phezu koLunge loKutyabeka (@ 0° AOI)

    Ravg< 1.25%

  • Yila ubude beWaveleng

    4µm

  • Laser Umonakalo Threshold

    0.25 J/cm2(6 ns, 30 kHz, @3.3μm)

iigrafu-img

Iigrafu

♦ Ijika lokuhanjiswa kwe-Si substrate engafakwanga: ukuhanjiswa okuphezulu ukusuka kwi-1.2 ukuya kwi-8 μm
♦ Igophe lothumelo lwe-AR-Coated Si substrate: Tavg > 98% phezu koluhlu lwe-3 - 5 μm
♦ Igophe lothumelo lwe-DLC + i-AR-Coated Si substrate: Tavg > 90% phezu koluhlu lwe-3 - 5 μm

imveliso-umgca-img

Ijika loThutho lwe-AR-Coated (3 - 5 μm) I-Silicon Substrate

imveliso-umgca-img

Ijika loThutho lweDLC + AR-Coated (3 - 5 μm) ISilicon Substrate