Lapho unquma phakathi kwe-plano-convex lens kanye ne-bi-convex lens, zombili ezidala ukuthi ukukhanya kwesigameko esihlanganisiwe kuhlangane, kuvamise ukufaneleka kakhulu ukukhetha ilensi ye-plano-convex uma ukukhuliswa okuphelele okufunayo kungaphansi kuka-0.2 noma kukhulu kuno-0.2 noma kukhulu kuno-0.2 5. Phakathi kwalawa manani amabili, amalensi ama-bi-convex ngokuvamile ayakhethwa.
I-Silicon inikeza i-conductivity ephezulu ye-thermal kanye ne-low density.Nokho inebhande eliqinile lokumunca kuma-microns angu-9, ayifanele ukusetshenziswa nezinhlelo zokusebenza zokudlulisela i-CO2 laser.I-Paralight Optics inikeza Amalensi e-Silicon (Si) e-Plano-Convex ayatholakala nge-broadband AR coating elungiselelwe ububanzi obungama-3 µm kuya ku-5 μm obufakwe kuzo zombili izindawo.Lokhu kunamathela kunciphisa kakhulu ukubukeka kwangaphandle kwe-substrate, kunikeze ukudluliswa okuphezulu kanye nokumunca okuncane kulo lonke uhla lwe-AR.Hlola Amagrafu ukuze uthole izinkomba zakho.
I-silicon (Si)
I-Low Density & High Thermal Conductivity
Okungagqokile noma okune-Antireflection & DLC Coatings ku-3 - 5 μm Range
Itholakala kusuka ku-15 kuya ku-1000 mm
I-Substrate Material
I-silicon (Si)
Uhlobo
I-Plano-Concex (PCX) Ilensi
Inkomba ye-Refraction
3.422 @ 4.58 μm
Inombolo ye-Abbe (Vd)
Akuchazwanga
I-Thermal Expansion Coefficient (CTE)
2.6 x 10-6/ ngo-20℃
Ukubekezelela Ububanzi
Ukunemba: +0.00/-0.10mm |Ukunemba okuphezulu: +0.00/-0.02mm
Ukujiya Ukubekezelelana
Ukunemba: +/-0.10 mm |Ukunemba okuphezulu: -0.02 mm
Ukubekezelela Ubude obugxile
+/- 1%
Ikhwalithi Yobuso (Scratch-Dig)
Isilinganiso: 60-40 |Ukunemba okuphezulu: 40-20
I-Surface Flatness (I-Plano Side)
λ/4
Amandla Obuso Obuyindilinga (Convex Side)
3 l/4
I-Surface Irregularity (Peak to Valley)
λ/4
Isikhungo
I-Precison:<3 arcmin |Ukunemba okuphezulu: <30 arcsec
Imbobo ecacile
90% we-Diameter
I-AR Coating Range
3 - 5 μm
Ukudluliswa kwe-Coating Range (@ 0° AOI)
I-Tavg > 98%
Ukubukeka phezu kobubanzi bokuhlanganisa (@ 0° AOI)
I-Ravg< 1.25%
Design Wavelength
4µm
I-Laser Damage Threshold
0.25 J/cm2(6 ns, 30 kHz, @3.3μm)