• Si-PCX
  • I-PCX-Lens-Si-1
  • I-Si-plano-convex

I-silicon (Si)
Amalensi e-Plano-Convex

Amalensi e-Plano-convex (PCX) anobude bokugxila obuphozithivu futhi angasetshenziswa ukugxilisa i-collimated beam endaweni egxile emuva, ukungqubuzana kokukhanya okuvela kumthombo wephoyinti, noma ukunciphisa i-engeli ephambukayo yomthombo ophambukayo.Ukuze unciphise ukwethulwa kwe-spherical aberration, umthombo wokukhanya ohlanganisiwe kufanele ube isigameko endaweni egobile yelensi uma usebenzisa i-PCX ukuze ugxilise umthombo wokukhanya ogqagqene;Ngokufanayo, imisebe yokukhanya ephambukayo kufanele ibe yisigameko endaweni epulaniwe yelensi ye-PCX lapho ingqubuzana nomthombo wokukhanya.Lawa ma-lens asetshenziswa ezinhlelweni ze-conjugate ezingapheli futhi ezinomkhawulo.

Lapho unquma phakathi kwe-plano-convex lens kanye ne-bi-convex lens, zombili ezidala ukuthi ukukhanya kwesigameko esihlanganisiwe kuhlangane, kuvamise ukufaneleka kakhulu ukukhetha ilensi ye-plano-convex uma ukukhuliswa okuphelele okufunayo kungaphansi kuka-0.2 noma kukhulu kuno-0.2 noma kukhulu kuno-0.2 5. Phakathi kwalawa manani amabili, amalensi ama-bi-convex ngokuvamile ayakhethwa.

I-Silicon inikeza i-conductivity ephezulu ye-thermal kanye ne-low density.Nokho inebhande eliqinile lokumunca kuma-microns angu-9, ayifanele ukusetshenziswa nezinhlelo zokusebenza zokudlulisela i-CO2 laser.I-Paralight Optics inikeza Amalensi e-Silicon (Si) e-Plano-Convex ayatholakala nge-broadband AR coating elungiselelwe ububanzi obungama-3 µm kuya ku-5 μm obufakwe kuzo zombili izindawo.Lokhu kunamathela kunciphisa kakhulu ukubukeka kwangaphandle kwe-substrate, kunikeze ukudluliswa okuphezulu kanye nokumunca okuncane kulo lonke uhla lwe-AR.Hlola Amagrafu ukuze uthole izinkomba zakho.

icon-umsakazo

Izici:

Okubalulekile:

I-silicon (Si)

I-Substrate:

I-Low Density & High Thermal Conductivity

Izinketho zokuhlanganisa:

Okungagqokile noma okune-Antireflection & DLC Coatings ku-3 - 5 μm Range

Ubude bokugxila:

Itholakala kusuka ku-15 kuya ku-1000 mm

isithonjana-isici

Imininingwane Ejwayelekile:

pro-ehlobene-ico

Umdwebo Wezithenjwa we

I-Plano-convex (PCX) Ilensi

I-Dia: Ububanzi
f: Ubude bokugxila
ff: Ubude Bendawo Ephambili
fb: Ubude beFocal Emuva
R: Irediyasi
tc: Ubukhulu obuphakathi
te: Ukujiya komphetho
H”: Emuva Indiza Eyinhloko

Qaphela: Ubude bokugxila bunqunywa kusukela endizeni eyinhloko engemuva, engahambelani nogqinsi lomkhawulo.

Amapharamitha

Amabanga & Ukubekezelelana

  • I-Substrate Material

    I-silicon (Si)

  • Uhlobo

    I-Plano-Concex (PCX) Ilensi

  • Inkomba ye-Refraction

    3.422 @ 4.58 μm

  • Inombolo ye-Abbe (Vd)

    Akuchazwanga

  • I-Thermal Expansion Coefficient (CTE)

    2.6 x 10-6/ ngo-20℃

  • Ukubekezelela Ububanzi

    Ukunemba: +0.00/-0.10mm |Ukunemba okuphezulu: +0.00/-0.02mm

  • Ukujiya Ukubekezelelana

    Ukunemba: +/-0.10 mm |Ukunemba okuphezulu: -0.02 mm

  • Ukubekezelela Ubude obugxile

    +/- 1%

  • Ikhwalithi Yobuso (Scratch-Dig)

    Isilinganiso: 60-40 |Ukunemba okuphezulu: 40-20

  • I-Surface Flatness (I-Plano Side)

    λ/4

  • Amandla Obuso Obuyindilinga (Convex Side)

    3 l/4

  • I-Surface Irregularity (Peak to Valley)

    λ/4

  • Isikhungo

    I-Precison:<3 arcmin |Ukunemba okuphezulu: <30 arcsec

  • Imbobo ecacile

    90% we-Diameter

  • I-AR Coating Range

    3 - 5 μm

  • Ukudluliswa kwe-Coating Range (@ 0° AOI)

    I-Tavg > 98%

  • Ukubukeka phezu kobubanzi bokuhlanganisa (@ 0° AOI)

    I-Ravg< 1.25%

  • Design Wavelength

    4µm

  • I-Laser Damage Threshold

    0.25 J/cm2(6 ns, 30 kHz, @3.3μm)

amagrafu-img

Amagrafu

♦ Ijika lokudlulisa le-Si substrate engagcotshiwe: ukudluliswa okuphezulu kusuka ku-1.2 kuya ku-8 μm
♦ Ijika lokudlulisela le-AR-Coated Si substrate: Tavg > 98% phezu kobubanzi obungu-3 - 5 μm
♦ Ijika lokudlulisela le-DLC + AR-Coated Si substrate: Tavg > 90% phezu kobubanzi obungu-3 - 5 μm

umkhiqizo-line-img

Ijika Lokudlulisela le-AR-Coated (3 - 5 μm) I-Silicon Substrate

umkhiqizo-line-img

Ijika Lokudlulisela le-DLC + I-AR-Coated (3 - 5 μm) I-Silicon Substrate